Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main el...
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| Glavni autori: | , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
IEEE
2024-01-01
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| Serija: | IEEE Journal of the Electron Devices Society |
| Teme: | |
| Online pristup: | https://ieeexplore.ieee.org/document/10549873/ |
| Oznake: |
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