Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main el...

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Detalles Bibliográficos

Principais autores:	Rhaycen R. Prates, Sylvain Barraud, Mikael Casse, Maud Vinet, Olivier Faynot, Marcelo A. Pavanello
Formato:	Artigo
Idioma:	Inglês
Publicado:	IEEE 2024-01-01
Series:	IEEE Journal of the Electron Devices Society
Assuntos:	Electrical characterization high temperature inversion-mode junctionless
Acceso en liña:	https://ieeexplore.ieee.org/document/10549873/
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