Analytical models of the crosstalk voltage in SiC MOSFETs under different loads
Abstract Due to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method ba...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Wiley
2023-11-01
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| Edice: | IET Power Electronics |
| Témata: | |
| On-line přístup: | https://doi.org/10.1049/pel2.12554 |
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