Design of a 2.4 kV Half‐Bridge Power Module With Chip‐Level Series‐Connected SiC MOSFETs
ABSTRACT Series connection of silicon carbide (SiC) metal‐oxide–semiconductor field effect transistors (MOSFETs) is a viable solution to reach blocking voltages that are not yet commercially available or limited for single‐chip devices. Typically, serialization is realized with discrete packaged dev...
Tallennettuna:
| Päätekijät: | , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley
2025-01-01
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| Sarja: | IET Power Electronics |
| Aiheet: | |
| Linkit: | https://doi.org/10.1049/pel2.70048 |
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