High Frequency Snubber Circuit for SiC MOSFET Module
During high frequency switching condition, overvoltage caused by the coupling oscillation between distributed parameters(inductance, capacitor) on Silicon Cabide(SiC) device will easily lead to breakdown damage of devices and the generated electromagnetic noise will interfere the normal operation of...
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| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Chinês |
| Έκδοση: |
Editorial Office of Control and Information Technology
2016-01-01
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| Σειρά: | Kongzhi Yu Xinxi Jishu |
| Θέματα: | |
| Διαθέσιμο Online: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.005 |
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