Design of a 2.4 kV Half‐Bridge Power Module With Chip‐Level Series‐Connected SiC MOSFETs

ABSTRACT Series connection of silicon carbide (SiC) metal‐oxide–semiconductor field effect transistors (MOSFETs) is a viable solution to reach blocking voltages that are not yet commercially available or limited for single‐chip devices. Typically, serialization is realized with discrete packaged dev...

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Hlavní autoři:	Tobias Nieckula Ubostad, Yoganandam Vivekanandham Pushpalatha, Frank Mauseth, Dimosthenis Peftitsis
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2025-01-01
Edice:	IET Power Electronics
Témata:	power MOSFET semiconductor device packaging
On-line přístup:	https://doi.org/10.1049/pel2.70048
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