A SiC Power MOSFET Model With an Improved Description of the JFET Region
ABSTRACT Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor (JFET) region. The model describes a...
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| Hauptverfasser: | , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley
2025-01-01
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| Schriftenreihe: | IET Power Electronics |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1049/pel2.70097 |
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