A SiC Power MOSFET Model With an Improved Description of the JFET Region

ABSTRACT Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor (JFET) region. The model describes a...

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Hlavní autoři:	Xiangzhen Li, Manhong Zhang, Yumeng Cai, Xiaoguang Wei, Zhibin Zhao, QingXin Meng, Zezhou Chang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2025-01-01
Edice:	IET Power Electronics
Témata:	power MOSFET semiconductor device models SPICE technology CAD (electronics)
On-line přístup:	https://doi.org/10.1049/pel2.70097
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