A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty
Abstract Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data. However, there might be heterogeneity in failure threshold...
I tiakina i:
| Ngā kaituhi matua: | , , , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Wiley
2024-09-01
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| Rangatū: | IET Power Electronics |
| Ngā marau: | |
| Urunga tuihono: | https://doi.org/10.1049/pel2.12611 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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