Analytical models of the crosstalk voltage in SiC MOSFETs under different loads
Abstract Due to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method ba...
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| 主要な著者: | , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Wiley
2023-11-01
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| シリーズ: | IET Power Electronics |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1049/pel2.12554 |
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