Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this t...
Tallennettuna:
| Päätekijät: | , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2024-01-01
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| Sarja: | IEEE Journal of the Electron Devices Society |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/10606256/ |
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