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Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS

This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this t...

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Autores principales: Gerd Kiene, Sadik Ilik, Luigi Mastrodomenico, Masoud Babaie, Fabio Sebastiano
Formato: Artigo
Lenguaje:Inglês
Publicado: IEEE 2024-01-01
Colección:IEEE Journal of the Electron Devices Society
Materias:
Low frequency noise
1/f noise
flicker noise
cryogenic electronics
Cryo-CMOS
quantum computing
Acceso en línea:https://ieeexplore.ieee.org/document/10606256/
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