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Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

ABSTRACT Strategic optimization of ferroelectric tunnel junctions (FTJs) is critical for advancing nonvolatile memory and neuromorphic computing technologies. In this work, we present a comprehensive study on materials and structural engineering to enable scalable hybrid‐switching FTJ arrays. We sys...

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Bibliografiske detaljer
Principais autores: Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon
Format: Artigo
Sprog:Inglês
Udgivet: Wiley 2026-03-01
Serier:Advanced Science
Fag:
Online adgang:https://doi.org/10.1002/advs.202516478
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