Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

ABSTRACT Strategic optimization of ferroelectric tunnel junctions (FTJs) is critical for advancing nonvolatile memory and neuromorphic computing technologies. In this work, we present a comprehensive study on materials and structural engineering to enable scalable hybrid‐switching FTJ arrays. We sys...

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Xehetasun bibliografikoak

Egile Nagusiak:	Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Wiley 2026-03-01
Saila:	Advanced Science
Gaiak:	ferroelectric tunnel junctions HfZrO2 hybrid switching large‐scale crossbar array oxygen vacancies vision transformer
Sarrera elektronikoa:	https://doi.org/10.1002/advs.202516478
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!