Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Abstract The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate stack successfully reduce the thickness of interfacial o...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2023-05-01
Цуврал:	Advanced Electronic Materials
Нөхцлүүд:	ferroelectricity field‐effect transistor HfZrO x oxygen scavenging
Онлайн хандалт:	https://doi.org/10.1002/aelm.202201257
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!