Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes
Ferroelectric (FE) Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demo...
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2021-10-01
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| Collection: | Nanomaterials |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2079-4991/11/10/2685 |
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