Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Abstract The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate stack successfully reduce the thickness of interfacial o...

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Hlavní autoři:	Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2023-05-01
Edice:	Advanced Electronic Materials
Témata:	ferroelectricity field‐effect transistor HfZrO x oxygen scavenging
On-line přístup:	https://doi.org/10.1002/aelm.202201257
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