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No-heating deposition of ferroelectric epitaxial Hf0.5Zr0.5O2 films using a sputtering method with precise RF power density and thickness control

The no-heating deposition of (111)-oriented epitaxial (Hf0.5Zr0.5)O2 films was successfully achieved on (111) indium tin oxide//(111) yttria-stabilized zirconia substrates using a radio-frequency (RF) magnetron sputtering method. As the RF power density was increased, the crystal phase changed seque...

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Principais autores: Takanori Mimura, Yoshiko Nakamura, Yutaro Tsuchiya, Kazuki Okamoto, Hiroshi Funakubo
פורמט: Artigo
שפה:Inglês
יצא לאור: Elsevier 2026-01-01
סדרה:Journal of Materiomics
נושאים:
No-heating deposition
Sputtering method
Ferroelectric film
HfZrO2
גישה מקוונת:http://www.sciencedirect.com/science/article/pii/S2352847825001194
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