Rapid cooling process-driven enhancement of an orthorhombic phase in ferroelectric HfZrOx of sub-3 nm ultrathin films by atomic layer deposition

In recent decades, fluorite-structured HfZrOx (HZO) has been spotlighted as a promising ferroelectric material for next-generation non-volatile memory devices. On an ultrathin scale, HZO thin films face challenges in the phase transformation to an orthorhombic (111) structure for ferroelectric prope...

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Bibliografische Detailangaben

Hauptverfasser:	So Yeon Shin, Yeon-Je Yu, Ae Rim Choi, Dohee Kim, Ja-Yong Kim, Seung Wook Ryu, Il-Kwon Oh
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2025-06-01
Schriftenreihe:	Applied Surface Science Advances
Schlagworte:	HfZrO Ferroelectric Atomic layer deposition Rapid cooling Orthorhombic phase
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2666523925000364
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