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Rapid cooling process-driven enhancement of an orthorhombic phase in ferroelectric HfZrOx of sub-3 nm ultrathin films by atomic layer deposition

In recent decades, fluorite-structured HfZrOx (HZO) has been spotlighted as a promising ferroelectric material for next-generation non-volatile memory devices. On an ultrathin scale, HZO thin films face challenges in the phase transformation to an orthorhombic (111) structure for ferroelectric prope...

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Principais autores: So Yeon Shin, Yeon-Je Yu, Ae Rim Choi, Dohee Kim, Ja-Yong Kim, Seung Wook Ryu, Il-Kwon Oh
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2025-06-01
Serier:Applied Surface Science Advances
Fag:
HfZrO
Ferroelectric
Atomic layer deposition
Rapid cooling
Orthorhombic phase
Online adgang:http://www.sciencedirect.com/science/article/pii/S2666523925000364
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