P–i–n photodetector with active GePb layer grown by sputtering epitaxy
In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surface. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb based p–i–n...
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| Principais autores: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.35848/1882-0786/ad3dc1 |
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