क्यूआर कोड

P–i–n photodetector with active GePb layer grown by sputtering epitaxy

In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surface. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb based p–i–n...

पूर्ण विवरण

में बचाया:
मुख्य लेखकों: Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, Jinlong Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: IOP Publishing 2024-01-01
श्रृंखला:Applied Physics Express
विषय:
magnetron sputtering
single-crystal
GePb films and GePb based p-i-n photodetectors
ऑनलाइन पहुंच:https://doi.org/10.35848/1882-0786/ad3dc1
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