Código QR (código de barras bidimensional)

P–i–n photodetector with active GePb layer grown by sputtering epitaxy

In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surface. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb based p–i–n...

ver descrição completa

Na minha lista:
Principais autores: Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, Jinlong Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li
Formato: Artigo
Idioma:Inglês
Publicado em: IOP Publishing 2024-01-01
coleção:Applied Physics Express
Assuntos:
magnetron sputtering
single-crystal
GePb films and GePb based p-i-n photodetectors
Acesso em linha:https://doi.org/10.35848/1882-0786/ad3dc1
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registros relacionados