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P–i–n photodetector with active GePb layer grown by sputtering epitaxy

In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surface. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb based p–i–n...

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Autori principali: Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, Jinlong Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li
Natura: Artigo
Lingua:Inglês
Pubblicazione: IOP Publishing 2024-01-01
Serie:Applied Physics Express
Soggetti:
magnetron sputtering
single-crystal
GePb films and GePb based p-i-n photodetectors
Accesso online:https://doi.org/10.35848/1882-0786/ad3dc1
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