Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-H...

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Bibliografiska uppgifter

Huvudupphov:	Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2023-03-01
Serie:	Energies
Ämnen:	MOSc-HEMT GaN MOS Etching surface preparation insulator
Länkar:	https://www.mdpi.com/1996-1073/16/7/2978
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