High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess

Atomic layer etching (ALE) is demonstrated as a superior gate recess technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si, offering notable enhancements in high-frequency performance. By suppressing plasma-induced defects and reducing surface roughness, ALE minimizes interface tr...

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Xehetasun bibliografikoak

Egile Nagusiak:	Hsuan-Yao Huang, TSung-Ying Yang, Cheng-Xiang Liu, Kuan-Pang Chang, You-Chen Weng, Jui-Sheng Wu, Cheng-Jun Huang, Chung-Han Chiu, You-Ting Lin, Chang-Fu Dee, Chun-Hsiung Lin, Edward Yi Chang
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	IOP Publishing 2025-01-01
Saila:	Applied Physics Express
Gaiak:	AlGaN/GaN HEMTs on Si low damage etching gate recess threshold voltage fT/fMAX load pull measurements
Sarrera elektronikoa:	https://doi.org/10.35848/1882-0786/ae2b4c
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