Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs). The fraction of filled traps increases with the threading dislocations, while the trapping effects cause a decrease in drain current and an...
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| Главные авторы: | , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI AG
2023-01-01
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| Серии: | Micromachines |
| Предметы: | |
| Online-ссылка: | https://www.mdpi.com/2072-666X/14/2/305 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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