Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs). The fraction of filled traps increases with the threading dislocations, while the trapping effects cause a decrease in drain current and an...
I tiakina i:
| Ngā kaituhi matua: | , , , , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2023-01-01
|
| Rangatū: | Micromachines |
| Ngā marau: | |
| Urunga tuihono: | https://www.mdpi.com/2072-666X/14/2/305 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
|