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Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-H...

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Principais autores: Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-03-01
Serier:Energies
Fag:
MOSc-HEMT
GaN
MOS
Etching
surface preparation
insulator
Online adgang:https://www.mdpi.com/1996-1073/16/7/2978
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