Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
Oxidation of silicon carbide (SiC) is known to induce defects at the interface of the SiO2/SiC system. NO-annealing is a standard industrial method of nitridation, but oxidation may progress during NO-nitridation, which may generate interface defects. Here, we propose a new method of fabricating SiO...
Tallennettuna:
| Päätekijät: | , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
AIP Publishing LLC
2023-11-01
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| Sarja: | AIP Advances |
| Linkit: | http://dx.doi.org/10.1063/5.0169573 |
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