QR-Code

Topological material in the III–V family: Heteroepitaxial InBi on InAs

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M[over ¯] high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with to...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Olivier Heckmann, Jean-Michel Mariot, Uros Djukic, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini
Format: Artigo
Sprache:Inglês
Veröffentlicht: American Physical Society 2024-11-01
Schriftenreihe:Physical Review Research
Online-Zugang:http://doi.org/10.1103/PhysRevResearch.6.043116
Tags: Tag hinzufügen
Keine Tags, Fügen Sie das erste Tag hinzu!

Ähnliche Einträge