Codice QR

Topological material in the III–V family: Heteroepitaxial InBi on InAs

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M[over ¯] high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with to...

Descrizione completa

Salvato in:
Autori principali: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Olivier Heckmann, Jean-Michel Mariot, Uros Djukic, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini
Natura: Artigo
Lingua:Inglês
Pubblicazione: American Physical Society 2024-11-01
Serie:Physical Review Research
Accesso online:http://doi.org/10.1103/PhysRevResearch.6.043116
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi