Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

As the demand for neuromorphic computing technology increases, the need for high-density resistive random access memory (RRAM) to meet data capacity expansion increases. Operating voltages in the DC measurement environment and their impact on RRAM readout process stability and reliability have been...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Jongmin Park, Sungjun Kim
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2022-08-01
Edice:	Results in Physics
Témata:	RRAM Valence change memory Optimization Readout process Endurance Reliability
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2211379722004053
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!