Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM
As the demand for neuromorphic computing technology increases, the need for high-density resistive random access memory (RRAM) to meet data capacity expansion increases. Operating voltages in the DC measurement environment and their impact on RRAM readout process stability and reliability have been...
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| Автори: | , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Elsevier
2022-08-01
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| Серія: | Results in Physics |
| Предмети: | |
| Онлайн доступ: | http://www.sciencedirect.com/science/article/pii/S2211379722004053 |
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