Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Abstract Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐bas...

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Principais autores:	Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Wiley-VCH 2026-04-01
סדרה:	Advanced Electronic Materials
נושאים:	analog ReRAM conductive‐metal‐oxide fading memory physics‐based compact model tiki‐taka algorithm
גישה מקוונת:	https://doi.org/10.1002/aelm.202500373
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!