Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Abstract Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐bas...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2026-04-01
Sarja:	Advanced Electronic Materials
Aiheet:	analog ReRAM conductive‐metal‐oxide fading memory physics‐based compact model tiki‐taka algorithm
Linkit:	https://doi.org/10.1002/aelm.202500373
Tagit:	Lisää tagi Ei tageja, Lisää ensimmäinen tagi!