Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Abstract Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐bas...

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Detalhes bibliográficos

Principais autores:	Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2026-04-01
coleção:	Advanced Electronic Materials
Assuntos:	analog ReRAM conductive‐metal‐oxide fading memory physics‐based compact model tiki‐taka algorithm
Acesso em linha:	https://doi.org/10.1002/aelm.202500373
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