Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Abstract Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐bas...

Disgrifiad llawn

Manylion Llyfryddiaeth

Prif Awduron:	Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	Wiley-VCH 2026-04-01
Cyfres:	Advanced Electronic Materials
Pynciau:	analog ReRAM conductive‐metal‐oxide fading memory physics‐based compact model tiki‐taka algorithm
Mynediad Ar-lein:	https://doi.org/10.1002/aelm.202500373
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!