Confocal Raman spectroscopy characterization of heteroepitaxial interfacial stress of GaN on sapphire substrate
Confocal Raman spectroscopy permits the nondestructive, depth-resolved quantification of interfacial stress in semiconductor heterostructures, which has an adverse impact of subsequent semiconductor device processing. In this study, a high-axial-resolution measurement system based on confocal Raman...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
AIP Publishing LLC
2026-03-01
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| Seri Bilgileri: | Nanotechnology and Precision Engineering |
| Online Erişim: | https://pubs.aip.org/tu/npe/article-pdf/doi/10.1063/5.0302470/20955498/033006_1_5.0302470.pdf |
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