Confocal Raman spectroscopy characterization of heteroepitaxial interfacial stress of GaN on sapphire substrate
Confocal Raman spectroscopy permits the nondestructive, depth-resolved quantification of interfacial stress in semiconductor heterostructures, which has an adverse impact of subsequent semiconductor device processing. In this study, a high-axial-resolution measurement system based on confocal Raman...
שמור ב:
| Principais autores: | , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
AIP Publishing LLC
2026-03-01
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| סדרה: | Nanotechnology and Precision Engineering |
| גישה מקוונת: | https://pubs.aip.org/tu/npe/article-pdf/doi/10.1063/5.0302470/20955498/033006_1_5.0302470.pdf |
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