Confocal Raman spectroscopy characterization of heteroepitaxial interfacial stress of GaN on sapphire substrate
Confocal Raman spectroscopy permits the nondestructive, depth-resolved quantification of interfacial stress in semiconductor heterostructures, which has an adverse impact of subsequent semiconductor device processing. In this study, a high-axial-resolution measurement system based on confocal Raman...
Na minha lista:
| Principais autores: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2026-03-01
|
| coleção: | Nanotechnology and Precision Engineering |
| Acesso em linha: | https://pubs.aip.org/tu/npe/article-pdf/doi/10.1063/5.0302470/20955498/033006_1_5.0302470.pdf |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|