GaN catalyzed nucleation of thin low threading dislocation GaN on sapphire
Because of the presence of a GaN surface during GaN nucleation and growth on sapphire substrates, a substantial improvement in crystal quality, as observed by narrowing of the x-ray diffraction rocking curve peaks corresponding to symmetric (0002) and asymmetric (10–12) reflections, was observed. Us...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
AIP Publishing LLC
2026-03-01
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| Saila: | AIP Advances |
| Sarrera elektronikoa: | https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0323604/20932278/035213_1_5.0323604.pdf |
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