Microwave performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates
We report on the design, fabrication, and characterization of AlScN/GaN metal–insulator–semiconductor high electron mobility transistors on semi-insulating GaN substrates. The layer is grown by MOCVD using (MCp)2ScCl precursor as the Sc source. Hall measurement shows a sheet carrier density of 1.12...
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| Hauptverfasser: | , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
AIP Publishing LLC
2026-07-01
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| Schriftenreihe: | APL Electronic Devices |
| Online-Zugang: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0315706/21063040/036102_1_5.0315706.pdf |
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