Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices
A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic system and seriously threatens the stabili...
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| Asıl Yazarlar: | , , , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2025-06-01
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| Seri Bilgileri: | Micromachines |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2072-666X/16/7/729 |
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