Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices

A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic system and seriously threatens the stabili...

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Autores principales:	Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2025-06-01
Colección:	Micromachines
Materias:	Cascode GaN HEMT power device off-state high field stress noise
Acceso en línea:	https://www.mdpi.com/2072-666X/16/7/729
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