Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications
Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue. Metal oxide semiconductor field effect transis...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Wiley
2023-01-01
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| Cyfres: | Journal of Electrical and Computer Engineering |
| Mynediad Ar-lein: | http://dx.doi.org/10.1155/2023/7069746 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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