Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications
Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue. Metal oxide semiconductor field effect transis...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Wiley
2023-01-01
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| Serier: | Journal of Electrical and Computer Engineering |
| Online adgang: | http://dx.doi.org/10.1155/2023/7069746 |
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