Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications
Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue. Metal oxide semiconductor field effect transis...
Gorde:
| Egile Nagusiak: | , , , , , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley
2023-01-01
|
| Saila: | Journal of Electrical and Computer Engineering |
| Sarrera elektronikoa: | http://dx.doi.org/10.1155/2023/7069746 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|