Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)

This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various...

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Bibliografiske detaljer

Principais autores:	Haoji Wan, Xianyun Liu, Xin Su, Xincheng Ren, Shengting Luo, Qi Zhou
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2022-11-01
Serier:	Applied Sciences
Fag:	multi-enhanced operation gate fin field-effect transistor (MEOG FinFET) silicon-on-insulator (SOI) operation in various states independent gates
Online adgang:	https://www.mdpi.com/2076-3417/12/21/11279
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