Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)
This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2022-11-01
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| Colecção: | Applied Sciences |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2076-3417/12/21/11279 |
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